PART |
Description |
Maker |
S29NS016JPLBFW002 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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SPANSION
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VCC4 VCC4-C3E-50M000 VCC4-G3E-50M000 VCC4-E3E-50M0 |
1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator CRYSTAL OSCILLATOR, CLOCK, 50 MHz, CMOS OUTPUT 1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator 1.8.5.3.0伏的CMOS振荡
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Vectron International, Inc.
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S70GL01GN00 S70GL01GN0007 |
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit垄芒 Process Technology 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit?/a> Process Technology
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SPANSION
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VCC1-A3O-34M368 VCC1-A3O-34M816 VCC1-A3O-34M56 VCC |
VCXO, CLOCK, 34.368 MHz, CMOS OUTPUT VCXO, CLOCK, 34.816 MHz, CMOS OUTPUT VCXO, CLOCK, 34.56 MHz, CMOS OUTPUT VCXO, CLOCK, 70.626 MHz, CMOS OUTPUT VCXO, CLOCK, 69.632 MHz, CMOS OUTPUT VCXO, CLOCK, 34.45 MHz, CMOS OUTPUT VCXO, CLOCK, 70 MHz, CMOS OUTPUT VCXO, CLOCK, 97.776 MHz, CMOS OUTPUT VCXO, CLOCK, 53.33 MHz, CMOS OUTPUT VCXO, CLOCK, 19.53 MHz, CMOS OUTPUT VCXO, CLOCK, 53.125 MHz, CMOS OUTPUT VCXO, CLOCK, 89.97804 MHz, CMOS OUTPUT VCXO, CLOCK, 89.472 MHz, CMOS OUTPUT VCXO, CLOCK, 89.512 MHz, CMOS OUTPUT VCXO, CLOCK, 48.33008 VCXO, CLOCK, 8.192 MHz, CMOS OUTPUT VCXO, CLOCK, 14.4 MHz, CMOS OUTPUT VCXO, CLOCK, 125.01 MHz, CMOS OUTPUT VCXO, CLOCK, 106.25 MHz, CMOS OUTPUT VCXO, CLOCK, 125 MHz, CMOS OUTPUT VCXO, CLOCK, 39.497 MHz, CMOS OUTPUT VCXO, CLOCK, 103.68 MHz, CMOS OUTPUT VCXO, CLOCK, 35.5 MHz, CMOS OUTPUT VCXO, CLOCK, 12.222 MHz, CMOS OUTPUT VCXO, CLOCK, 51.156 MHz, CMOS OUTPUT VCXO, CLOCK, 52.5 MHz, CMOS OUTPUT VCXO, CLOCK, 78 MHz, CMOS OUTPUT VCXO, CLOCK, 72 MHz, CMOS OUTPUT VCXO, CLOCK, 27 MHz, CMOS OUTPUT VCXO, CLOCK, 36.5 MHz, CMOS OUTPUT VCXO, CLOCK, 42.4 MHz, CMOS OUTPUT VCXO, CLOCK, 112.5 MHz, CMOS OUTPUT VCXO, CLOCK, 115.2 MHz, CMOS OUTPUT VCXO, CLOCK, 127 MHz, CMOS OUTPUT VCXO, CLOCK, 116.64 MHz, CMOS OUTPUT VCXO, CLOCK, 110 MHz, CMOS OUTPUT VCXO, CLOCK, 16.61 MHz, CMOS OUTPUT VCXO, CLOCK, 50 MHz, CMOS OUTPUT VCXO, CLOCK, 10.24 MHz, CMOS OUTPUT VCXO, CLOCK, 114 MHz, CMOS OUTPUT VCXO, CLOCK, 20 MHz, CMOS OUTPUT VCXO, CLOCK, 100 MHz, CMOS OUTPUT VCXO, CLOCK, 20.516 MHz, CMOS OUTPUT VCXO, CLOCK, 128 MHz, CMOS OUTPUT VCXO, CLOCK, 12.5 MHz, CMOS OUTPUT VCXO, CLOCK, 21.71055 MHz, CMOS OUTPUT VCXO, CLOCK, 21.504 MHz, CMOS OUTPUT VCXO, CLOCK, 36.86 MHz, CMOS OUTPUT VCXO, CLOCK, 33.3 MHz, CMOS OUTPUT VCXO, CLOCK, 12 MHz, CMOS OUTPUT VCXO, CLOCK, 41.472 MHz, CMOS OUTPUT VCXO, CLOCK, 67.5 MHz, CMOS OUTPUT VCXO, CLOCK, 41.657 MHz, CMOS OUTPUT VCXO, CLOCK, 42.5 MHz, CMOS OUTPUT VCXO, CLOCK, 42 MHz, CMOS OUTPUT VCXO, CLOCK, 47.404 MHz, CMOS OUTPUT VCXO, CLOCK, 47.197 MHz, CMOS OUTPUT VCXO, CLOCK, 47.40437 MHz, CMOS OUTPUT VCXO, CLOCK, 12.2725 MHz, CMOS OUTPUT VCXO, CLOCK, 28.8 MHz, CMOS OUTPUT VCXO, CLOCK, 12.352 MHz, CMOS OUTPUT VCXO, CLOCK, 28 MHz, CMOS OUTPUT VCXO, CLOCK, 120 MHz, CMOS OUTPUT VCXO, CLOCK, 2.048 MHz, CMOS OUTPUT VCXO, CLOCK, 2 MHz, CMOS OUTPUT VCXO, CLOCK, 24.54 MHz, CMOS OUTPUT VCXO, CLOCK, 17.734 MHz, CMOS OUTPUT VCXO, CLOCK, 15.974 MHz, CMOS OUTPUT
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Vectron International, Inc.
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S70GL01GN00 S70GL01GN00FFI120 S70GL01GN00FFI122 S7 |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit?/a> Process Technology
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SPANSION
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AT49F2048A AT49F2048A-70RC AT49F2048A-70RI AT49F20 |
2M bit, 5-Volt Read and 5-Volt Write Flash, Bottom Boot From old datasheet system 2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO44 2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 6800uF 100WV 20% *NO Pb* 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48 VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC http://
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AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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AT29BV040A AT29BV040A-20TC AT29BV040A-20TI AT29BV0 |
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory 4M bit, 2.7-Volt Read and 2.7-Volt Write Flash
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ATMEL[ATMEL Corporation]
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AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail 16-Megabit097152*8-bit)CMOS 5.0 Volt-only,sector Erase Flash memory LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1 LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位)CMOS 5.0伏只,扇区擦除闪 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
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Advanced Micro Devices, Inc. SPANSION LLC
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AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta DB25SC37 DSUB 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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